Cu箔缓冲层对SiO2/TC4接头组织性能的影响
Microstructure and Properties of SiO2/ TC4 Brazed Joint with Cu Buffer Layer
- 2024年54卷第7期 页码:62-67
纸质出版日期: 2024-07-25
DOI: 10.7512/j.issn.1001-2303.2024.07.09
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纸质出版日期: 2024-07-25 ,
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薛行雁,龚浩,程东海,等.Cu箔缓冲层对SiO2/TC4接头组织性能的影响[J].电焊机,2024,54(7):62-67.
XUE Hangyan, GONG Hao, CHENG Donghai, et al.Microstructure and Properties of SiO2/ TC4 Brazed Joint with Cu Buffer Layer[J].Electric Welding Machine, 2024, 54(7): 62-67.
针对SiO
2
石英玻璃/TC4钛合金钎焊接头易脆裂难题,以Cu箔为缓冲层,采用AgCuTi活性钎料对石英玻璃/TC4钛合金进行真空钎焊。通过金相显微镜、扫描电镜、能谱仪以及X射线衍射仪、力学试验机分析Cu缓冲层及不同钎焊工艺对SiO
2
/TC4接头组织结构及力学性能的影响。研究结果表明,在合适的钎焊温度下,Cu箔缓冲层的加入一方面在SiO
2
/AgCuTi界面处形成了合适厚度的TiSi
2
+Ti
4
O
7
/Cu
2
Ti
4
O双层结构,另一方面在焊缝中形成大量韧性较好的Cu固溶体,这些固溶体在钎焊冷却过程中通过钎缝自身的蠕变和屈服吸收接头中的残余应力,减少接头残余应力,提高了钎焊接头的力学性能。当钎焊温度为900 ℃、保温时间10 min时,SiO
2
/TC4钎焊接头抗剪强度最高,达到38 MPa。Cu箔缓冲层的加入显著改善了Si
O
2
石英玻璃/TC4钎焊接头的力学性能。
The brazing joint of quartz glass/TC4 titanium alloy was brittle. to solve this problem
The vacuum brazing of quartz glass /AgCuTi/TC4 titanium alloy was carried out by adding Cu buffer layer in the weld. The effects of Cu buffer layer and different brazing processes on the microstructure and mechanical properties of SiO
2
/TC4 joint were analyzed. The results shows that: At the right brazing temperature
The addition of Cu buffer layer can form TiSi
2
+Ti
4
O
7
/Cu
2
Ti
4
O at the interface of SiO
2
/AgCuTi
and form a large amount of Cu solid solution in the weld
which can reduce the residual stress of the joints
and then improve the mechanical properties of the brazed joint. When the brazing temperature is 900 ℃ and the holding time is 10 min
the shear strength of the brazed joint with Cu buffer layer is the highest
reaching 38 MPa.
石英玻璃TC4钛合金Cu箔缓冲层固溶体应力
quartz glassTC4 titanium alloyCu buffer layersolid solutionstress
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