随着弧焊逆变电源向高频和高功率密度发展,更高电压及电流的变化率使寄生参数的影响更加突出。为解决系统设计者在缺乏芯片的工艺和电参数条件下建立功率半导体模块模型的普遍问题,推出一种高效实用的封装寄生参数提取方法——基于部分单元等效电路PEEC原理拆分互连导体,筛选出几何同构的一个单元,运用ANSYS Q3D进行准静态电磁场的数值计算,提取寄生电感电阻参数矩阵,合并与约减等效电路,构建包含封装寄生电感电阻电容的完整模块模型。以SKM200GB125D IGBT模块为例给出了模型参数,运用双脉冲测试法对开关特性进行实测和仿真,仿真波形与实测对比证实了模型的准确性与建模方法的有效性。
With the development of arc welding inverter to high frequency and high power density,the influences of parasitic parameters become more critical with the high voltage and current slew rate. Modeling of power semiconductor modules in the absence of data of chip technology and electrical parameters is common problem for system designer. To solve this problem,a high efficiency and practical method for extracting parasitic parameters inside packaging is presented. Splitting interconnect conductors based on the principle of partial element equivalent circuit,PEEC. The numerical calculation of quasi-static electromagnetic field is carried out for one unit with the same geometric structure using ANSYS Q3 D. Parasitic inductance and resistance parameter matrix is extracted. By merging and reducing equivalent circuit,the complete module model including parasitic inductance,resistance and capacitance is built. The parameters of the model are provided for an IGBT module of SKM200 GB125 D as an example. Using double pulse test method,the switching behavior is simulated and measured. The accuracy of the model and validity of the modeling method is verified by the comparison between the simulated and experimental results.