Ion Irradiation Behavior of Additively Manufactured Silicon Carbide Microstructure

GUO Shuaike; HU Xunxiang; TENG Changqing; CUI Lijuan

doi:10.7512/j.issn.1001-2303.2026.04.12

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Ion Irradiation Behavior of Additively Manufactured Silicon Carbide Microstructure
Vol. 56, Issue 4, Pages: 98-104(2026)
Received：09 December 2025，

Revised：2026-02-25，

Published：20 April 2026
DOI： 10.7512/j.issn.1001-2303.2026.04.12
稿件说明：

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郭帅科，胡逊祥，滕常青，等.增材制造碳化硅微观结构的离子辐照行为［J］.电焊机，2026，56（4）：98-104. DOI： 10.7512/j.issn.1001-2303.2026.04.12.

GUO Shuaike, HU Xunxiang, TENG Changqing, et al.Ion Irradiation Behavior of Additively Manufactured Silicon Carbide Microstructure[J].Electric Welding Machine, 2026, 56(4): 98-104. DOI： 10.7512/j.issn.1001-2303.2026.04.12.

摘要

粘合剂喷射成形（BJ）结合化学气相渗透（CVI）的增材制造技术能够制备高纯度、大尺寸、复杂形状的碳化硅，是解决核用碳化硅材料制备问题的重要候选技术路线。但该工艺制备的碳化硅特别是CVI沉积碳化硅在辐照条件下的稳定性仍缺乏研究，制约了其作为核级材料的进一步发展。本研究采用平均粒径为20 μm的高纯度碳化硅粉末，通过BJ+CVI工艺制备了直径20 mm、厚度1.5 mm的增材碳化硅圆片样品，其密度平均值为2.70 g/cm

，为理论密度的84%。使用3 MeV的Si

离子在500 ℃，800 ℃下将样品辐照至10 dpa，采用透射电子显微镜（TEM）对辐照前后的CVI沉积碳化硅的微观结构进行了表征。结果表明，CVI沉积碳化硅在离子辐照后未见明显的微孔洞和位错环，也没有出现非晶化，表现出良好的辐照稳定性。

Abstract

Additive manufacturing combining binder jetting (BJ) with chemical vapor infiltration (CVI) is capable of producing high-purity

large-sized

and geometrically complex silicon carbide (SiC)

making it a promising candidate for resolving the fabrication challenges of SiC as a nuclear-grade material. However

the microstructural evolution under ion irradiation of SiC produced by this approach

particularly the CVI-SiC

remains insufficiently studied

which limits its development. In this study

SiC powder with an average particle size of 20 μm was used to fabricate additively manufactured SiC (AM-SiC) specimens with a diameter of 20 mm and a thickness of 1.5 mm via the BJ+CVI

which achieved an average density of 2.70 g/cm³. AM-SiC specimens were irradiated with 3 MeV Si²⁺ ions at 500 ℃ and 800 ℃ to 10 dpa. The microstructure of the CVI-SiC before and after irradiation was characterized using transmission electron microscopy (TEM). No significant irradiation-induced voids

dislocation loops

or amorphization were observed in the CVI-SiC after ion irradiation

demonstrating its excellent irradiation stability.

关键词

Keywords

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