Research on Bonding Process, Microstructure and Properties of Pulsed Current Diffusion Bonding of GH536 Superalloy

WU Tong; WU Qichang; XU Haikun; LIN Panpan; LIN Tiesong; HE Peng

doi:10.7512/j.issn.1001-2303.2025.10.11

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Research on Bonding Process, Microstructure and Properties of Pulsed Current Diffusion Bonding of GH536 Superalloy
Vol. 55, Issue 10, Pages: 96-105(2025)
Received：28 August 2025，

Published：20 October 2025
DOI： 10.7512/j.issn.1001-2303.2025.10.11
稿件说明：

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武通，武琪昌，徐海坤，等.GH536高温合金脉冲电流扩散焊工艺与接头组织性能研究［J］.电焊机，2025，55（10）：96-105. DOI： 10.7512/j.issn.1001-2303.2025.10.11.

WU Tong, WU Qichang, XU Haikun, et al.Research on Bonding Process, Microstructure and Properties of Pulsed Current Diffusion Bonding of GH536 Superalloy[J].Electric Welding Machine, 2025, 55(10): 96-105. DOI： 10.7512/j.issn.1001-2303.2025.10.11.

摘要

为实现微流道-空腔结构的高强度、高精度制造，使用脉冲电流对GH536薄壁空腔结构进行低温扩散焊接，分析了接头显微组织及力学性能。结果表明：脉冲电流可显著促进接触界面形成并加速界面孔洞闭合，同时仅在焊缝产生高温减小变形，进而实现低温、小变形及高强度扩散焊接。传统热压扩散焊接时，GH536在830 ℃仍有较高的塑性变形抗力，接头仅产生局部接触界面，剪切强度仅为32 MPa。引入脉冲电流后，在700 ℃即产生局部接触界面。当焊接温度为900 ℃时，界面孔洞完全闭合，接头剪切强度达到535 MPa，是传统热压扩散焊的1.6倍，接头变形率为0.42%，仅为传统热压扩散焊的28.38%。使用Ni箔片辅助脉冲电流扩散焊接时，Ni箔片作为软中间层进一步促进了接触界面在低温形成，600 ℃即产生局部接触界面，焊缝中再结晶机制为基于亚晶旋转的连续动态再结晶，再结晶促进了跨越界面晶粒的产生，进而提高了接头强度。本研究可为紧凑型换热器等精密空腔构件的制造提供理论指导和技术支撑。

Abstract

To achieve high-strength and high-precision manufacturing of microchannel cavity structures

low-temperature diffusion bonding of GH536 superalloy thin-walled cavities was diffusion-bonded using pulsed current. And the microstructure and mechanical properties of the joints were characterized. The results indicate that the pulsed current can significantly promote contacting surface formation and accelerates the closure of interfacial voids. Simultaneously

it generates localized Joule heating only near the bonding interface

thereby minimizing deformation. Consequently

diffusion bonding with low temperature

minimal deformation

and high joint strength was achieved. For the conventional hot pressure diffusion bonding (HPDB) joint bonded at 830 ℃

local contacting surface was formed and the joint shear strength was only 32 MPa. For the pulsed current diffusion bonding (PCDB) joint

the contacting surface was formed at a temperature as low as 700 ℃. For the PCDB joint bonded at 900 ℃

complete closure of interfacial voids was achieved. In addition

a joint with a high shear strength of 535 MPa and a low deformation rate of 0.42% was obtained

and these were 1.60 times and 0.28 times that of the conventional HPDB joint

respectively. During Ni foil-assisted pulse current diffusion bonding

the Ni interlayer effectively facilitates contacting surface formation at 600 ℃. The recrystallization mechanism in the bonding interface is subgrain rotation-based continuous dynamic recrystallization

wherein the recrystallization promotes the formation of cross-interface grains

thereby enhancing the joint strength. This study can provide theoretical guidance and technological underpinning for the manufacturing of precision cavity components

including compact heat exchangers and similar intricate hollow structures.

关键词

Keywords

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