Microstructure and Shear Strength of SiC Joint Fabricated by W Coating and Pure Ag Brazing

YAO Xianglei; QUAN Xiaoyang; LI Rongcheng; ZHAO Jinhua; HUANG Qing

doi:10.7512/j.issn.1001-2303.2025.04.03

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Microstructure and Shear Strength of SiC Joint Fabricated by W Coating and Pure Ag Brazing
Vol. 55, Issue 4, Pages: 16-22(2025)
Received：21 November 2024，

Revised：2025-01-11，

Published：20 April 2025
DOI： 10.7512/j.issn.1001-2303.2025.04.03
稿件说明：

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姚向雷，全孝洋，李荣程，等.纯Ag钎焊镀钨SiC陶瓷的接头组织与强度［J］.电焊机，2025，55（4）：16-22. DOI： 10.7512/j.issn.1001-2303.2025.04.03.

YAO Xianglei, QUAN Xiaoyang, LI Rongcheng, et al.Microstructure and Shear Strength of SiC Joint Fabricated by W Coating and Pure Ag Brazing[J].Electric Welding Machine, 2025, 55(4): 16-22. DOI： 10.7512/j.issn.1001-2303.2025.04.03.

摘要

在多种SiC陶瓷的连接方法中，钎焊因其工艺简单和较高的灵活性已经得到了广泛的研究。然而，传统的活性钎焊方法在核能领域的应用中存在局限性。为此，利用磁控溅射在无压烧结SiC陶瓷表面镀上500 nm厚的镀钨膜，并使用纯度为99.99 wt.%的纯银作为钎料，探索低活性钎焊方法。试验在1 000 ℃的高真空环境下实现了SiC陶瓷的钎焊。在不添加活性元素的前提下，钨镀层的存在极大地改善了银对SiC表面的润湿性。为了研究钎缝的结构，采用机械抛光和离子溅射两种方法处理样品表面，结果表明离子溅射法可有效避免机械抛光引入的划痕和杂质。显微观察和元素分析表明，该方法形成了结合紧密的钎缝，钎缝保持了界面层-钎料层-界面层的结构，各层间的界限清晰。钎料层保持为纯银相，界面层为钨镀层。X射线衍射谱表明，W与SiC基体发生了反应，形成了WC、W

C、W

相。这些相分布在钨镀层内，未见基体内有明显的反应产物。接头连接强度为27±7 MPa。钎缝断面普遍可见银钎料撕裂的形貌以及少量SiC基体局域破坏的形貌。以上结果表明采用钨镀层和银钎料的方案可以实现SiC的低活性连接。

Abstract

In the various methods of connecting SiC ceramics

brazing has been widely studied due to its simple process and high flexibility. However

traditional active brazing methods have limitations in their application in the nuclear energy field. For this reason

this study used magnetron sputtering to plate a 500 nm thick tungsten film on the surface of pressureless sintered SiC ceramics

and explored low-activity brazing methods using pure silver with a purity of 99.99 wt.% as the brazing filler metal. The brazing of SiC ceramics was realized in a high vacuum environment at 1 000 ℃. Without adding active elements

the presence of the tungsten plating greatly improved the wettability of silver on the SiC surface. To study the structure of the brazing seam

both mechanical polishing and ion sputtering methods were used to treat the sample surface. The results showed that the ion sputtering method can effectively avoid scratches and impurities introduced by mechanical polishing. Microscopic observation and elemental analysis indicated that this method formed a tightly bonded brazing seam

which maintained an interface layer-brazing filler layer-interface layer structure

with clear boundaries between each layer. The filler layer remained as a pure silver phase

and the interface layer was the tungsten plating. X-ray diffraction spectra showed that tungsten reacted

with the SiC substrate to form WC

and W

phases. These phases were distributed within the tungsten plating

and no obvious reaction products were seen in the substrate. The connection strength of the joint was 27± 7 MPa. The cross-section of the brazing seam generally showed the appearance of torn silver brazing filler and a small amount of local damage to the SiC substrate. The above results indicate that the scheme using tungsten plating and silver brazing filler can achieve low-activity connection of SiC.

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