Microstructure and Strength of SiC Ceramic Joints Diffusion Bonded by Spark Plasma Sintering with the SiC-Al2O3-Y2O3 Interlayer

WANG Yafeng; WEI Lianfeng; YANG Fuquan; LI Huaxin; DONG Yu; ZHENG Yong; HE Yanming; YANG Jianguo

doi:10.7512/j.issn.1001-2303.2023.12.01

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Microstructure and Strength of SiC Ceramic Joints Diffusion Bonded by Spark Plasma Sintering with the SiC-Al₂O₃-Y₂O₃ Interlayer
Vol. 53, Issue 12, Pages: 1-6(2023)
Received：03 April 2023，

Revised：2023-05-15，

Published：25 December 2023
DOI： 10.7512/j.issn.1001-2303.2023.12.01
稿件说明：

移动端阅览

王亚峰，魏连峰，杨富荃，等.SiC-Al₂O₃-Y₂O₃中间层放电等离子扩散连接SiC陶瓷的接头组织与强度［J］.电焊机，2023，53（12）：1-6. DOI: 10.7512/j.issn.1001-2303.2023.12.01. DOI：

WANG Yafeng, WEI Lianfeng, YANG Fuquan, et al.Microstructure and Strength of SiC Ceramic Joints Diffusion Bonded by Spark Plasma Sintering with the SiC-Al₂O₃-Y₂O₃ Interlayer[J].Electric Welding Machine, 2023, 53(12): 1-6. DOI: 10.7512/j.issn.1001-2303.2023.12.01. DOI：

摘要

采用无压烧结SiC作为母材，SiC基SiC-Al

-Y

粉末作为中间层，使用放电等离子扩散连接SiC陶瓷。通过金相显微镜、扫描电子显微镜、能谱仪、电子背散射衍射分析、剪切试验等手段对SiC接头的微观组织和力学性能进行了表征评价。微观组织表征结果表明，SiC接头界面结合质量较高，各个位置中间层厚度均匀。接头的主要相组成为β-SiC和Y-Al-Si-O-C，中间层SiC为细小的β-SiC晶粒，母材与中间层处晶粒没有表现出明显的择优取向。由于放电等离子扩散连接的快速连接过程，接头处未发生明显的β→α相变。同时，由于接头为近同质SiC接头，界面处未出现明显应力集中。通过剪切试验，对比不同温度热处理前后的接头剪切强度。SiC接头的初始室温剪切强度为219.9 MPa，在经过800 ºC/2 h的空气中热处理后接头强度升至320.8 MPa，进一步提高热处理温度至1 300 ºC，接头强度升至389.1 MPa，接头断裂主要发生在母材，断口呈现河流状花样，为脆性断裂。接头强度的上升归因于热处理过程中产生的SiO

与Y-Al-Si-O-C的交互作用愈合了中间层两侧母材中存在的微裂纹等缺陷。

Abstract

In this study

the pressureless-sintered SiC and SiC-based powder (SiC-Al

-Y

) were used as the substrate and interlayer

respectively

for joining of SiC ceramics by spark plasmas sintering. The microstructure and strength of SiC joints were investigated by means of metalloscope

scanning electron microscopy

energy spectroscopy

electron backscatter diffraction and shear test. The microstructural characterization indicated that the SiC joint exhibited a high-quality interface bonding with uniform thickness in the interlayer. The main phase compositions of the joint were β-SiC and Y-Al-Si-O-C. The fine β-SiC grains in the interlayer exhibited a random orientation. No significant β→α phase transition occurred at the joint due to the fast process of diffusion bonding by spark plasma sintering. Meanwhile

no significant stress concentration was observed at the interface because of the near-homogeneous SiC joint formed. The initial room temperature shear strength of the SiC joint was 219.9 MPa

which increased to 320.8 MPa after heat treatment in air at 800 ºC for 2 h. Further increasing the heat treatment temperature to 1300 ºC

the joint strength increased to 389.1 MPa. The joint fracture occurred mainly at the substrate with a river-like pattern

as a representative of brittle fracture. The increase of joint strength may be attributed to the interaction of Y-Al-Si-O-C and SiO

produced during the heat treatment process

healing the defects presented in the SiC substrate such as microcracks.

关键词

Keywords

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