Temperature Field Simulation and the Effect on the Substrate During Wire Arc Additive Manufacturing of 316L

Yanyan DI; Renzhi HU; Yibo XIONG; Zhizhen ZHENG; Jianjun LI

doi:10.7512/j.issn.1001-2303.2022.01.08

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Temperature Field Simulation and the Effect on the Substrate During Wire Arc Additive Manufacturing of 316L
Vol. 52, Issue 1, Pages: 63-67(2022)
Received：25 June 2021，

Online First：28 July 2021，

Published：20 January 2022
DOI： 10.7512/j.issn.1001-2303.2022.01.08
稿件说明：

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邸艳艳，胡仁志，熊逸博，等.电弧熔丝增材制造316L的温度场仿真及对基体的影响［J］.电焊机，2022，52（01）：63-67. DOI： 10.7512/j.issn.1001-2303.2022.01.08.

DI Yanyan, HU Renzhi, XIONG Yibo, et al.Temperature field simulation and the effect on the substrate during wire arc additive manufacturing of 316L[J].Electric Welding Machine, 2022, 52(01): 63-67. DOI： 10.7512/j.issn.1001-2303.2022.01.08.

摘要

电弧熔丝增材（WAAM）是一种利用电弧将焊丝熔积成型的新型制造方法，基本原理是“分层制造，逐层堆积”。在连续的热循环作用下，WAAM成型件内部易产生较大的残余应力和变形，影响零件的性能。为了研究电弧增材制造过程中温度演变规律及对基体的影响，基于有限元法，采用“生死单元”技术建立了三维瞬态仿真模型，进行了层间停留温度为400 ℃条件下306L不锈钢电弧增材制造过程温度场的模拟；采用热成像仪测量增材过程的温度，将模拟结果与实测结果进行对比研究。结果表明：模拟结果和测试结果有高度的一致性，验证了模型的准确性；在增材制造过程中，会发生热积累现象，高温区域增大；堆积过程中前四层会对基板产生较大的热影响；基体的热影响敏化区的深度大约为基板下6 mm。

Abstract

In order to investigate the temperature evolution law and the influence on the substrate during the wire arc additive manufacturing process

this paper establishes a three-dimensional transient simulation model based on the finite element method and carries out the simulation of the temperature field in the wire arc additive manufacturing process; the temperature of the additive process is measured by the thermal imager

and the simulation results are compared with the actual measurement results. The results show that: the simulation results and test results match well and verify the accuracy of the model; during the wire arc additive manufacturing process

the heat accumulation phenomenon increases in the high temperature region; the first four layers in the stacking process have a large thermal impact on the substrate; the sensitized depth of the heat affected zone of the substrate is about 6 mm below the substrate.

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references

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